Ottawa Rapid thermal oxidation is applied to simultaneously grow the gate and capacitor oxides in a mixed analog/digital metal oxide semiconductor (MOS) process with polysilicon-polysilicon capacitors. This technique allows the use of a high temperature for polysilicon oxidation, which provides increased dielectric strength while avoiding diffusion of the active device boron threshold adjust implant and associated short-channel effects in p-channel transistors. A process has been developed which gives gate oxide breakdown fields in excess of 13 MV/cm for 17 nm gate oxides and over 8 MV/cm for 27 nm capacitor (interpoly) oxides while providing submicron n- and p-channel MOSFETs with electrically long-channel behavior.
Journal of the Electrochemical Society
Department of Electronics

LeBlanc, D.G. (David G.), Tarr, N.G, & Theriault, R.E. (Robert E.). (1992). Simultaneous Rapid Thermal Growth of Gate and Interpoly Oxides for Analog MOS Applications. Journal of the Electrochemical Society, 139(1), 227–231. doi:10.1149/1.2069174