Experimental investigation of N-MOS inversion layers in the electric quantum limit

Kalnitsky, A., Boothroyd, A.R., Ellul, J.P., N.G. Tarr (Gary), Weaver, L. and Beerkens, R.

1992-03-01

Journal of Electronic Materials , Volume 21 - Issue 3 p. 367- 372

Additional Metadata
Keywords	N-MOS inversion layer, NMOSFET, quantum limit, Si
Persistent URL	dx.doi.org/10.1007/BF02660468
Journal	Journal of Electronic Materials
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Kalnitsky, A., Boothroyd, A.R., Ellul, J.P., Tarr, N.G, Weaver, L., & Beerkens, R. (1992). Experimental investigation of N-MOS inversion layers in the electric quantum limit. Journal of Electronic Materials, 21(3), 367–372. doi:10.1007/BF02660468

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