Additional Metadata
Keywords N-MOS inversion layer, NMOSFET, quantum limit, Si
Persistent URL dx.doi.org/10.1007/BF02660468
Journal Journal of Electronic Materials
Citation
Kalnitsky, A., Boothroyd, A.R., Ellul, J.P., Tarr, N.G, Weaver, L., & Beerkens, R. (1992). Experimental investigation of N-MOS inversion layers in the electric quantum limit. Journal of Electronic Materials, 21(3), 367–372. doi:10.1007/BF02660468