Experimental investigation of N-MOS inversion layers in the electric quantum limit

Kalnitsky, A., Boothroyd, A.R., Ellul, J.P., N.G. Tarr (Gary), Weaver, L. and Beerkens, R.

1992-03-01

Journal of Electronic Materials , Volume 21 - Issue 3 p. 367- 372

Additional Metadata
Keywords	N-MOS inversion layer, NMOSFET, quantum limit, Si
Persistent URL	doi.org/10.1007/BF02660468
Journal	Journal of Electronic Materials
Organisation	Department of Electronics
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Kalnitsky, A., Boothroyd, A.R., Ellul, J.P., Tarr, N.G, Weaver, L., & Beerkens, R. (1992). Experimental investigation of N-MOS inversion layers in the electric quantum limit. Journal of Electronic Materials, 21(3), 367–372. doi:10.1007/BF02660468

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