1992-03-01
Experimental investigation of N-MOS inversion layers in the electric quantum limit
Publication
Publication
Journal of Electronic Materials , Volume 21 - Issue 3 p. 367- 372
Additional Metadata | |
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N-MOS inversion layer, NMOSFET, quantum limit, Si | |
dx.doi.org/10.1007/BF02660468 | |
Journal of Electronic Materials | |
Organisation | Department of Electronics |
Kalnitsky, A., Boothroyd, A.R., Ellul, J.P., Tarr, N.G, Weaver, L., & Beerkens, R. (1992). Experimental investigation of N-MOS inversion layers in the electric quantum limit. Journal of Electronic Materials, 21(3), 367–372. doi:10.1007/BF02660468
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