Ion implantation-induced strong photosensitivity in high-purity fused silica: Correlation of index changes with VUV color centers
Applied Physics Letters , Volume 68 - Issue 22 p. 3084- 3086
We have studied optical changes induced by ArF (6.4 eV/193 nm) excimer laser light illumination of high purity SiO2 implanted with Si2+ (5 MeV) at a fluence of 1015 ions/cm2. Optical absorption was measured from 3 eV (400 nm) to 8 eV (155 nm) and showed evidence of several well-defined absorption bands. A correlation in the bleaching behavior appears to exist between the so-called D band (located at 7.15 eV) and the well-known B2α band which is attributed to oxygen vacancies. Changes in the refractive index as a function of ArF illumination were measured and found to be in good quantitative agreement with a Kramers-Kronig analysis of the optical absorption data.
|Applied Physics Letters|
|Organisation||Department of Electronics|
Verhaegen, M. (M.), Brebner, J.L. (J. L.), Allard, L.B. (L. B.), & Albert, J. (1996). Ion implantation-induced strong photosensitivity in high-purity fused silica: Correlation of index changes with VUV color centers. Applied Physics Letters, 68(22), 3084–3086. doi:10.1063/1.116430