The authors report thermo-optical switching in a 92 layer Si/Si0.7Ge0.3 distributed Bragg reflector (DBR) grown by molecular beam epitaxy. Depending on the layer periodicity, this structure exhibited a positive or negative reflectivity switching at λ = 1.06μm, with a switch-on time of less than 20ns and reflectivity contrast ratios greater than 50%.

Additional Metadata
Persistent URL dx.doi.org/10.1049/el:19940617
Journal Electronics Letters
Citation
Fernando, C., Janz, S., Baribeau, J.M., Normandin, R., & Wight, J. S. (1994). Thermo-optical switching in Si/Si1-xGex distributed Bragg reflectors. Electronics Letters, 30(11), 901–903. doi:10.1049/el:19940617