1994-05-26
Thermo-optical switching in Si/Si1-xGex distributed Bragg reflectors
Publication
Publication
Electronics Letters , Volume 30 - Issue 11 p. 901- 903
The authors report thermo-optical switching in a 92 layer Si/Si0.7Ge0.3 distributed Bragg reflector (DBR) grown by molecular beam epitaxy. Depending on the layer periodicity, this structure exhibited a positive or negative reflectivity switching at λ = 1.06μm, with a switch-on time of less than 20ns and reflectivity contrast ratios greater than 50%.
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| doi.org/10.1049/el:19940617 | |
| Electronics Letters | |
| Organisation | Carleton University |
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Fernando, C., Janz, S., Baribeau, J.M., Normandin, R., & Wight, J. S. (1994). Thermo-optical switching in Si/Si1-xGex distributed Bragg reflectors. Electronics Letters, 30(11), 901–903. doi:10.1049/el:19940617
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