GaAs/AlGaAs HBT modeling for microwave circuit applications
This paper describes a model for a GaAs/AlGaAs Heterojunction Bipolar Transistor (HBT). The model is based on the Gummel-Poon topology with modifications to account for self-heating and transit time effects. The model is capable of predicting the DC and small signal S-parameters from 1-40GHz. The simulated and measured load pull characteristics showed a 1-2dB discrepancy.
|Conference||1994 Symposium on Antenna Technology and Applied Electromagnetics, ANTEM 1994|
Sychaleun, S., Laneve, T., Doky, H., Stubbs, M.G., & Wight, J. S. (1994). GaAs/AlGaAs HBT modeling for microwave circuit applications. In Symposium on Antenna Technology and Applied Electromagnetics, ANTEM 1994 - Conference Proceedings (pp. 538–541).