This paper reports on an optical receiver employing a p-i-n diode and a GaAs HBT monolithic microwave integrated circuit (MMIC) distributed preamplifier combination. The design is the first to have a photodiode mounted directly on me MMIC chip. The p-i-n preamplifier displays a measured average equivalent input noise current density of 24 pA/Hz. Good agreement is obtained between the predicted and measured noise performance. The monolithic eight-stage distributed amplifier is implemented using Mortel's GaAs HBT (f T = 70 GHz) process, and makes use of a coplanar waveguide regime having a large input impedance optimized for noise performance and bandwidth. The p-i-n photodiode employed is an mGaAs vertically illuminated structure, also from Nortel. While the voltage gain of the amplifier displays a 3 dB bandwidth extending to nearly 40 GHz, the bandwidth of the complete optical receiver is found to be only 22 GHz. Packaging effects are believed to be responsible for this shrinkage.

Additional Metadata
Keywords Distributed amplifier, GaAs HBT, p-i-n diode, Photoreceiver, Preamplifier
Persistent URL dx.doi.org/10.1109/CJECE.2005.1532606
Journal Canadian Journal of Electrical and Computer Engineering
Citation
Tian, X. (Xizhen), Roy, L, & Freundorfer, A.P. (2005). Noise performance of a preamplifier for high-speed optical receiver front-ends. Canadian Journal of Electrical and Computer Engineering, 30(1), 49–54. doi:10.1109/CJECE.2005.1532606