A novel on-wafer resistive noise source, useful for noise characterization of microwave devices with the cold noise power measurement technique, is described. The noise source enhances measurement accuracy by providing a calibrated noise temperature directly at the device reference plane. A procedure for determining the excess noise ratio of the noise source is presented and validated up to 40 GHz. The noise source is employed in an on-wafer measurement system, allowing the noise parameters of two-port devices to be extracted. Following a description of the apparatus and measurement procedure, an example of a high-electron-mobility transistor noise parameter measurement at millimeter-wave frequencies is presented.

Additional Metadata
Keywords Microwave and mm-wave IC, Noise measurement, Noise parameters, On-wafer characterization
Persistent URL dx.doi.org/10.1109/19.779182
Journal IEEE Transactions on Instrumentation and Measurement
Béland, P. (Paul), Roy, L, Labonté, S. (Sylvain), & Stubbs, M. (Malcolm). (1999). An enhanced on-wafer millimeter-wave noise parameter measurement system. IEEE Transactions on Instrumentation and Measurement, 48(4), 825–829. doi:10.1109/19.779182