A simple backgated fully-depleted silicon-on-insulator (SOI) MOSFET structure is fabricated and tested. A backgate electrode is formed on the MOSFET structure by high-energy boron implantation through the silicon film and buried oxide into a lightly-doped n-type substrate. The simple implanted backgate electrode provides effective dynamic control of VT in fully-depleted silicon on insulator (SOI) MOSFETS. SOISPICE simulation indicates that the new structure can be useful for 1 V supply CMOS.

Additional Metadata
Conference Proceedings of the 1996 IEEE International SOI Conference
Tarr, N.G, Soreefan, R., MacElwee, T.W., Snelgrove, W.M., & Bazarjani, S. (1996). Simple implanted backgate MOSFET for dynamic threshold control in fully-depleted SOI CMOS. Presented at the Proceedings of the 1996 IEEE International SOI Conference.