A simple junction-isolated backgate electrode, formed by boron implantation through the buried oxide, is shown to provide effective dynamic control of device thresholds in fully depleted SOI CMOS for ≃ 1V power supply operation.

Additional Metadata
Keywords CMOS integrated circuits, MOSFET, Silicon-on-insulator
Journal Electronics Letters
Citation
Tarr, N.G, Soreefan, R., MacElwee, T.W., Snelgrove, W.M., & Bazarjani, S. (1996). Simple backgated MOSFET structure for dynamic threshold control in fully depleted SOI CMOS. Electronics Letters, 32(12), 1093–1095.