MOSFET dosimeters incorporating an electrically floating polysilicon gate have been fabricated in a commercial CMOS technology. Charge is placed on the floating gate by tunnelling from a small overlapping injector gate. Subsequent irradiation partially discharges the floating gate, producing a change in threshold voltage which can be used to infer the absorbed dose. No external power source is required during this sensing period. Sensitivities up to 70 mVGy-1 (0.7 mV/rad) have been obtained for temperature-compensated matched-pair dosimeters under 60Co gamma irradiation.

Additional Metadata
Conference Proceedings of the 1997 4th European Conference on Radiation and Its Effects on Components and Systems, RADECS'97
Citation
Tarr, N.G, Mackay, G.F., Shortt, K., & Thomson, I. (1998). Floating gate MOSFET dosimeter requiring no external bias supply. Presented at the Proceedings of the 1997 4th European Conference on Radiation and Its Effects on Components and Systems, RADECS'97.