Floating gate MOSFET dosimeter requiring no external bias supply
MOSFET dosimeters incorporating an electrically floating polysilicon gate have been fabricated in a commercial CMOS technology. Charge is placed on the floating gate by tunnelling from a small overlapping injector gate. Subsequent irradiation partially discharges the floating gate, producing a change in threshold voltage which can be used to infer the absorbed dose. No external power source is required during this sensing period. Sensitivities up to 70 mVGy-1 (0.7 mV/rad) have been obtained for temperature-compensated matched-pair dosimeters under 60Co gamma irradiation.
|Conference||Proceedings of the 1997 4th European Conference on Radiation and Its Effects on Components and Systems, RADECS'97|
Tarr, N.G, Mackay, G.F., Shortt, K., & Thomson, I. (1998). Floating gate MOSFET dosimeter requiring no external bias supply. Presented at the Proceedings of the 1997 4th European Conference on Radiation and Its Effects on Components and Systems, RADECS'97.