Fully depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors with junction-isolated back gate electrodes formed by implanting boron through the silicon film and buried oxide into lightly doped n-type separation by implantation of oxygen substrates have been studied experimentally and through numerical device simulation. The useful range of threshold adjustment by back gate biasing is shown to be approximately ±300 mV for typical structures, irrespective of silicon film or buried oxide thickness, and is limited primarily by accumulation or inversion of the back surface of the silicon film for extreme values of back gate bias.

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Journal Journal of Vacuum Science and Technology A
Citation
Tarr, N.G, Wang, Y., Soreefan, R., Snelgrove, W.M., Manning, B.M., Bazarjani, S., & MacElwee, T.W. (1998). Limitations on threshold adjustment by backgating in fully depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors. Journal of Vacuum Science and Technology A, 16(2), 838–842.