Scaling the SiGe channel pmetal-oxide-semiconductor field effect transistor: the case for p+SiGe gates
The scalability of the SiGe channel MOSFET to the 0.1 μm technology generation was studied using the two-dimensional device simulator MEDICI. For this purpose, devices with n+ and p+ polysilicon gates and with intermediate work function SiGe gates were considered. It was found that the SiGe channel pMOSFET offers no advantage for technology generation beyond 0.1 μm.
|Journal||Journal of Vacuum Science and Technology A|
Wong, D.M., & Tarr, N.G. (2000). Scaling the SiGe channel pmetal-oxide-semiconductor field effect transistor: the case for p+SiGe gates. Journal of Vacuum Science and Technology A, 18(2), 783–786. doi:10.1116/1.582180