The scalability of the SiGe channel MOSFET to the 0.1 μm technology generation was studied using the two-dimensional device simulator MEDICI. For this purpose, devices with n+ and p+ polysilicon gates and with intermediate work function SiGe gates were considered. It was found that the SiGe channel pMOSFET offers no advantage for technology generation beyond 0.1 μm.

Additional Metadata
Persistent URL dx.doi.org/10.1116/1.582180
Journal Journal of Vacuum Science and Technology A
Citation
Wong, D.M., & Tarr, N.G. (2000). Scaling the SiGe channel pmetal-oxide-semiconductor field effect transistor: the case for p+SiGe gates. Journal of Vacuum Science and Technology A, 18(2), 783–786. doi:10.1116/1.582180