A 1 V 3.8-5.7 GHz VCO was designed and fabricated in a 0.13 μm SOI CMOS process. This VCO features differentially-tuned accumulation MOS varactors that (a) provides 40% frequency tuning when biased between 0 to 1 V, and (b) rejects common-mode noise such as flicker noise. At 1 MHz offset, the phase noise is -121.67 dBc/Hz at 3.8 GHz, and -111.67 dBc/Hz at 5.7 GHz. The power dissipation is between 2.3 to 2.7 mW depending on the centre frequency. When VDD is reduced to 0.75 V, the VCO only dissipates 0.8 mW at 5.5 GHz.

Additional Metadata
Conference 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Citation
Fong, N. (Neric), Plouchart, J.-O. (Jean-Olivier), Zamdmer, N. (Noah), Liu, D. (Duixian), Wagner, L. (Lawrence), Plett, C, & Tarr, G. (Garry). (2002). A 1V 3.8-5.7 GHz differentially-tuned VCO in SOI CMOS. Presented at the 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.