Simple and accurate technique for extracting the parasitic resistances of the dual-gate GaAs MESFET

Ibrahim, M. (Mostafa), B. Syrett (Barry) and Bennett, J. (Jeffrey)

2002-08-01

IEEE Microwave and Wireless Components Letters , Volume 12 - Issue 8 p. 284- 286

Additional Metadata
Keywords	Dual-gate MESFET, Equivalent circuit, Parameters extraction
Persistent URL	dx.doi.org/10.1109/LMWC.2002.801938
Journal	IEEE Microwave and Wireless Components Letters
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Ibrahim, M. (Mostafa), Syrett, B, & Bennett, J. (Jeffrey). (2002). Simple and accurate technique for extracting the parasitic resistances of the dual-gate GaAs MESFET. IEEE Microwave and Wireless Components Letters, 12(8), 284–286. doi:10.1109/LMWC.2002.801938

Publication