Additional Metadata
Keywords Dual-gate MESFET, Equivalent circuit, Parameters extraction
Persistent URL dx.doi.org/10.1109/LMWC.2002.801938
Journal IEEE Microwave and Wireless Components Letters
Citation
Ibrahim, M. (Mostafa), Syrett, B, & Bennett, J. (Jeffrey). (2002). Simple and accurate technique for extracting the parasitic resistances of the dual-gate GaAs MESFET. IEEE Microwave and Wireless Components Letters, 12(8), 284–286. doi:10.1109/LMWC.2002.801938