Simple and accurate technique for extracting the parasitic resistances of the dual-gate GaAs MESFET

Ibrahim, M. (Mostafa), B. Syrett (Barry) and Bennett, J. (Jeffrey)

2002-08-01

IEEE Microwave and Wireless Components Letters , Volume 12 - Issue 8 p. 284- 286

Additional Metadata
Keywords	Dual-gate MESFET, Equivalent circuit, Parameters extraction
Persistent URL	dx.doi.org/10.1109/LMWC.2002.801938
Journal	IEEE Microwave and Wireless Components Letters
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Ibrahim, M. (Mostafa), Syrett, B, & Bennett, J. (Jeffrey). (2002). Simple and accurate technique for extracting the parasitic resistances of the dual-gate GaAs MESFET. IEEE Microwave and Wireless Components Letters, 12(8), 284–286. doi:10.1109/LMWC.2002.801938

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