2002-08-01
Simple and accurate technique for extracting the parasitic resistances of the dual-gate GaAs MESFET
Publication
Publication
IEEE Microwave and Wireless Components Letters , Volume 12 - Issue 8 p. 284- 286
Additional Metadata | |
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Dual-gate MESFET, Equivalent circuit, Parameters extraction | |
dx.doi.org/10.1109/LMWC.2002.801938 | |
IEEE Microwave and Wireless Components Letters | |
Organisation | Carleton University |
Ibrahim, M. (Mostafa), Syrett, B, & Bennett, J. (Jeffrey). (2002). Simple and accurate technique for extracting the parasitic resistances of the dual-gate GaAs MESFET. IEEE Microwave and Wireless Components Letters, 12(8), 284–286. doi:10.1109/LMWC.2002.801938
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