Silicon-on-insulator (SOI) technology has been a promising platform for photonic applications. However, the high index-contrast between silicon and the top cladding (SiO2 or air) of the SOI waveguides makes the modal birefringence hard to control. Consequently, SOI based photonics integrated circuits (PICs) are in general highly polarization-sensitive, making polarization management important. In this paper, a polarization rotator (PR) design on the 220 nm SOI platform is demonstrated through numerical simulations and experiments. The demonstrated PR design is based on asymmetrical periodic loaded waveguide structures. The demonstrated design features compact device footprint and can be fabricated by CMOS compatible process. In addition, no special cladding is required to break the vertical symmetry of the waveguide. The design has shown promising performance over the C-band wavelengths (1530 nm-1565 nm) by simulations. However, the fabrication requirements are stringent for the design, thus the performance of the fabricated devices are limited by the current fabrication technology.

Additional Metadata
Persistent URL dx.doi.org/10.1117/12.2211659
Conference Silicon Photonics XI
Citation
Sun, Y. (Yao), & Ye, W.N. (2016). CMOS-compatible polarization rotator design based on asymmetrical periodic loaded waveguide structure. In Proceedings of SPIE - The International Society for Optical Engineering. doi:10.1117/12.2211659