2010-05-03
Fabrication techniques of high aspect ratio vertical lightpipes using a dielectric photomask
Publication
Publication
Presented at the
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III (January 2010), San Francisco, CA
We report the development of new fabrication techniques for creating high aspect ratio optical lightpipes in SiO2 layers of 10μm thickness and above. A dielectric photo mask was used for deep reactive ion etching. Our experiments show that CF4-based reaction gases were best for deep etching with high selectivity and etch rate. Trenches with diameters or width of 1.5μm were demonstrated, with an aspect ratio of 7.2:1 and a sidewall angle of 87.4 degrees. We also present the lift-off process of the etch masks and the via-filling procedures for the lightpipes. These structures are useful for image sensors, vertical interconnect and waveguiding applications.
Additional Metadata | |
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Deep-etching fabrication, Dielectric photo mask, High-aspect-ratio etching, Image sensors, Lightpipes, Vertical interconnects, Vertical waveguides | |
dx.doi.org/10.1117/12.840725 | |
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III | |
Organisation | Department of Electronics |
Ye, W.N, Duane, P. (Peter), Wober, M. (Munib), & Crozier, K.B. (Kenneth B.). (2010). Fabrication techniques of high aspect ratio vertical lightpipes using a dielectric photomask. In Proceedings of SPIE - The International Society for Optical Engineering. doi:10.1117/12.840725
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