Thin films of GexSi1-xOy were studied through cosputtering of Ge and Si in an argon and oxygen atmosphere. Silicon and oxygen content were varied from 0 to 30% and the effect of the addition of each element on electrical and optical properties of amorphous germanium was studied. Increasing the Si content was found to inhibit the formation of germanium-oxygen bonds.

doi.org/10.1063/1.1609633
Journal of Applied Physics
Department of Electronics

Ahmed, A.H.Z., & Tait, R. (2003). Characterization of amorphous GexSi1-xOy for micromachined uncooled bolometer applications. Journal of Applied Physics, 94(8), 5326–5332. doi:10.1063/1.1609633