We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

Additional Metadata
Keywords Cryogenic detectors, Double-beta decay detectors, Noble liquid detectors (scintillation, ionization, double-phase), Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc)
Persistent URL dx.doi.org/10.1088/1748-0221/13/09/T09006
Journal Journal of Instrumentation
Citation
Sun, X.L. (X. L.), Tolba, T. (T.), Cao, G.F. (G. F.), Lv, P. (P.), Wen, L.J. (L. J.), Odian, A. (A.), … Ziegler, T. (T.). (2018). Study of silicon photomultiplier performance in external electric fields. Journal of Instrumentation, 13(9). doi:10.1088/1748-0221/13/09/T09006