A series of copper(I) amidinates of the general type [(R′NC(R) NR″)Cu]2 (R′ and R″ = n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl; R = methyl, n-butyl) have been synthesized and characterized. These compounds are planar dimers, bridged by nearly linear N-Cu-N bonds. Their properties (volatility, low melting point, high thermal stability, and self-limited surface reactivity) are well-suited for atomic layer deposition (ALD) of copper metal films that are pure, highly conductive, conformal, and strongly adherent to substrates.

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Persistent URL dx.doi.org/10.1021/ic048492u
Journal Inorganic Chemistry
Citation
Li, Z. (Zhengwen), Barry, S.T, & Gordon, R.G. (Roy G.). (2005). Synthesis and characterization of copper(I) amidinates as precursors for atomic layer deposition (ALD) of copper metal. Inorganic Chemistry, 44(6), 1728–1735. doi:10.1021/ic048492u