High pixel temperatures for IR scene projector arrays face materials challenges of oxidation, diffusion, and recrystallization. For cost effective development of new high-temperature materials, we have designed and fabricated simplified pixels for testing. These consist of resistive elements, traces, and bond pads sandwiched between dielectric layers on Si wafers. Processing involves a pad exposure etch, a pixel outline etch, and an undercut etch to thermally isolate the resistive element from the substrate. Test pixels were successfully fabricated by electron-beam lithography using a combination of wet and dry etching.

Additional Metadata
Keywords Infrared, MEMS, Scene projector
Persistent URL dx.doi.org/10.1117/12.2177025
Conference Infrared Imaging Systems: Design, Analysis, Modeling, and Testing XXVI
Citation
Fredricksen, C.J. (Christopher J.), Calhoun, S. (Seth), Trewick, S. (Stephen), Coffey, A. (Aubrey), Dein, E. (Edward), Coffey, K.R. (Kevin R.), … Goodwin, S.H. (Scott H.). (2015). Test pixels for high-temperature infrared scene projection. In Proceedings of SPIE - The International Society for Optical Engineering. doi:10.1117/12.2177025