Interdigitated metal-semiconductor-metal (MSM) photodetectors operating at 1550 nm were fabricated by depositing metal contacts on top of polycrystalline silicon (polysilicon), which was deposited by a variety of techniques. The highest responsivity was 0.66 mA/W, corresponding to an external quantum efficiency of 0.16%, obtained from a 2 μm thick polysilicon sample. Using Raman spectroscopy, it was found that polysilicon with grain sizes between 6 nm and 13 nm provides the best photoresponse at 1550nm.

Additional Metadata
Keywords 1550 nm, MSM devices, Photodetectors, Polysilicon
Persistent URL dx.doi.org/10.1117/12.567094
Conference Photonics North 2004: International Conference on Applications of Photonic Technology, ICAPT
Citation
Liu, Y. (Yumei), Tarr, N.G, & Knights, A.P. (Andrew P.). (2004). CMOS compatible polysilicon MSM photodetector for 1550-nm light. Presented at the Photonics North 2004: International Conference on Applications of Photonic Technology, ICAPT. doi:10.1117/12.567094