Single ended computational SRAM bit-cell
Dual port SRAM plays an important role in maintaining the bandwidth of dataflow between memory and processor. To improve data stability and bandwidth, the memory industry moved from conventional 6 transistor (6T) to 8 transistor (8T) SRAM but compromised on the layout area for additional stability. To address the trade-off between area and reliability, a novel Single Ended 8T SRAM is proposed in this paper along with its static analysis, transient response and power consumption, to observe its efficiency and reliability. The proposed SRAM bit-cell architecture is also capable of in-memory computation, thereby potentially avoiding the Von-Neumann bottleneck problem for some computations. In particular, the proposed SRAM can perform in-memory NAND and NOR operations, and may be useful for low-power and high-performance machine learning and neural network hardware architectures.
|2019 International Symposium on Signals, Circuits and Systems, ISSCS 2019|
|Organisation||Department of Electronics|
Kareer, S. (Shobhit), MacEachern, L, Groza, V. (Voicu), & Park, J. (Jeongwon). (2019). Single ended computational SRAM bit-cell. In ISSCS 2019 - International Symposium on Signals, Circuits and Systems. doi:10.1109/ISSCS.2019.8801735