S-Parameter Characterization and Modeling of Three-Terminal Semiconductive Devices at Cryogenic Temperatures
FET’s, HEMT’s, and Pseudomorphic-HEMT’s (P-HEMT’s) are accurately characterized over the frequency range from 1 GHz to 20 GHz using a newly developed split-block test fixture and the Through-Reflect-Line (TRL) calibration technique. Accurate characterization allows small-signal models to be closely fitted at both temperatures. The performance improvement offered by low temperature operation is described. Three generations of three-terminal microwave semiconductive devices are measured and analyzed at 297K and 77K.
|Journal||IEEE Microwave and Guided Wave Letters|
Smuk, J.W., Stubbs, M.G., & Wight, J. S. (1992). S-Parameter Characterization and Modeling of Three-Terminal Semiconductive Devices at Cryogenic Temperatures. IEEE Microwave and Guided Wave Letters, 2(3), 111–113. doi:10.1109/75.124916