2006-05-22
Characterization and modeling of AlGaNGaN heterostructure field effect transistors for low noise amplifiers
Publication
Publication
Journal of Vacuum Science and Technology A , Volume 24 - Issue 3 p. 629- 633
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dx.doi.org/10.1116/1.2186659 | |
Journal of Vacuum Science and Technology A | |
Organisation | Department of Electronics |
Knox, S.H., Rogers, J, Chyurlia, P.N.A., Tarr, N.G, Bardwell, J.A., Tang, H., & Haffouz, S. (2006). Characterization and modeling of AlGaNGaN heterostructure field effect transistors for low noise amplifiers. Journal of Vacuum Science and Technology A, 24(3), 629–633. doi:10.1116/1.2186659
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