Characterization and modeling of AlGaNGaN heterostructure field effect transistors for low noise amplifiers

Knox, S.H., J. Rogers (John), Chyurlia, P.N.A., N.G. Tarr (Gary), Bardwell, J.A., Tang, H. and Haffouz, S.

2006-05-22

Journal of Vacuum Science and Technology A , Volume 24 - Issue 3 p. 629- 633

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Persistent URL	dx.doi.org/10.1116/1.2186659
Journal	Journal of Vacuum Science and Technology A
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Knox, S.H., Rogers, J, Chyurlia, P.N.A., Tarr, N.G, Bardwell, J.A., Tang, H., & Haffouz, S. (2006). Characterization and modeling of AlGaNGaN heterostructure field effect transistors for low noise amplifiers. Journal of Vacuum Science and Technology A, 24(3), 629–633. doi:10.1116/1.2186659

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