Additional Metadata
Persistent URL dx.doi.org/10.1116/1.2186659
Journal Journal of Vacuum Science and Technology A
Citation
Knox, S.H., Rogers, J, Chyurlia, P.N.A., Tarr, N.G, Bardwell, J.A., Tang, H., & Haffouz, S. (2006). Characterization and modeling of AlGaNGaN heterostructure field effect transistors for low noise amplifiers. Journal of Vacuum Science and Technology A, 24(3), 629–633. doi:10.1116/1.2186659