Phase field modeling of domain structures in ferroelectric thin films
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control , Volume 55 - Issue 5 p. 963- 970
Phase-field simulations were used to explore the effect of the characteristics of the Landau-Devonshire free energy and values of electrostatic and elastic interactions on the formation of different types of domain structures in ferroelectric thin films. Simulations were performed at different constant-applied electric fields and by using a cyclic continuously changing field. It is shown that the 180° or 90° domain structures can be produced depending on the relative strength of elastic interactions and the ratio of barrier heights that determine the energy of the 180° and 90° domain boundaries. It is shown that the applied field strength and the thickness of the dead layer can play a minor role in the transition between the 90° and 180° domain structures. It is also demonstrated that the poling history can affect the type of the domain structure.
|IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|
|Organisation||Department of Mechanical and Aerospace Engineering|
Artemev, A, Slutsker, J. (Julia), & Roytburd, A.L. (Alexander L.). (2008). Phase field modeling of domain structures in ferroelectric thin films. In IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control (Vol. 55, pp. 963–970). doi:10.1109/TUFFC.2008.740