Design and characterization of a MEMS capacitive switch for improved RF amplifier circuits
A design procedure for a MEMS capacitive switch with a focus on the circuit designer's requirements is presented. A MEMS switch is designed, fabricated and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band LNA operating at 2.4 GHz and 5.2 GHz, and a tunable power amplifier at 5.2 GHz are designed in 0.18 μm CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands and result in up to 37% PAE improvement in the PA at low input powers.
|Conference||IEEE 2005 Custom Integrated Circuits Conference|
Danson, J. (John), Plett, C, & Tait, R. (2005). Design and characterization of a MEMS capacitive switch for improved RF amplifier circuits. Presented at the IEEE 2005 Custom Integrated Circuits Conference. doi:10.1109/CICC.2005.1568654