Effect of residual ion damage on the minority carrier lifetime in molecular beam epitaxy grown silicon doped by low-energy ion implantation
Applied Physics Letters , Volume 67 p. 977
The residual ion damage due to low-energy ion implantation during molecular beam epitaxy growth was investigated by measuring the minority carrier lifetime in the base of a silicon bipolar transistor. The base was doped with As + ions at 200 eV to a concentration of 10 19 cm -3. Three samples were grown at temperatures of 500, 650, and 800°C. The 500°C sample had a minority carrier lifetime in the base ∼1/6 that of the samples grown at the higher temperatures. On annealing at 650°C the lifetimes of all samples were essentially equal. The results indicate that at this dopant concentration the collision cascades caused by ion bombardment do not overlap.
|Applied Physics Letters|
|Organisation||Department of Electronics|
Peters, C.J., Noël, J.P., Xu, D.X., Buchanan, M., Du, J., & Tarr, N.G. (1995). Effect of residual ion damage on the minority carrier lifetime in molecular beam epitaxy grown silicon doped by low-energy ion implantation. Applied Physics Letters, 67. doi:10.1063/1.114964