5.9 GHZ inductor-less Low Noise Amplifier
This paper presents a novel way to design an inductor-less Low Noise Amplifier. The LNA created uses an Artificial Tank (AT) created from a damped ring oscillator (RO) to replace the LC-tank normally used in tuned circuits. The measured results show the LNA has an 18dB voltage gain, 2.3dB Noise Figure, an IP3 of -11 dBm, a 1dB compression point of -19 dBm, and a power consumption of 4.85mW. The main advantage of using the AT is to minimize the silicon area and to operate at a high frequency of 5.9GHz. The prototype, made using CMOS 0.18-micron technology, occupied one-fiftieth of the silicon area generally used by circuits of this type.
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|2006 Canadian Conference on Electrical and Computer Engineering, CCECE'06|
|Organisation||Department of Electronics|
Ahmed, A. (Abdulhakim), & Wight, J. S. (2007). 5.9 GHZ inductor-less Low Noise Amplifier. In Canadian Conference on Electrical and Computer Engineering (pp. 1498–1501). doi:10.1109/CCECE.2006.277455