Optimized CML circuits for 10-Gb/s backplane transmission with 120-nm CMOS technology

Wang, B. (Bo), Chen, D. (Dianyong), Liao, A. (Andrea), Liang, B. (Bangli) and T. Kwasniewski (Tad)

2008-12-01

Presented at the 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC (December 2008)

Additional Metadata
Persistent URL	doi.org/10.1109/EDSSC.2008.4760694
Conference	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Organisation	Department of Electronics
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Wang, B. (Bo), Chen, D. (Dianyong), Liao, A. (Andrea), Liang, B. (Bangli), & Kwasniewski, T. (2008). Optimized CML circuits for 10-Gb/s backplane transmission with 120-nm CMOS technology. Presented at the 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. doi:10.1109/EDSSC.2008.4760694

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