Additional Metadata
Keywords GaInAsSb/GaSb, Multiple junction, Optical-electrical (O/E) interconnections, Photodetectors, PIN, Vertically stacked
Persistent URL dx.doi.org/10.1109/TED.2009.2036303
Journal IEEE Transactions on Electron Devices
Citation
Liang, B. (Bangli), Chen, D. (Dianyong), Wang, B. (Bo), Kwasniewski, T, & Wang, Z. (Zhigong). (2010). Analysis, optimization, and design of 2-2.8 μm stacked multiple-junction PIN GaInAsSb/GaSb photodetectors for future O/E interconnections. IEEE Transactions on Electron Devices, 57(2), 361–367. doi:10.1109/TED.2009.2036303