2010-02-01
Analysis, optimization, and design of 2-2.8 μm stacked multiple-junction PIN GaInAsSb/GaSb photodetectors for future O/E interconnections
Publication
Publication
IEEE Transactions on Electron Devices
,
Volume 57
-
Issue 2
p. 361-
367
| Additional Metadata | |
|---|---|
| Keywords | GaInAsSb/GaSb, Multiple junction, Optical-electrical (O/E) interconnections, Photodetectors, PIN, Vertically stacked |
| Persistent URL | dx.doi.org/10.1109/TED.2009.2036303 |
| Journal | IEEE Transactions on Electron Devices |
| Citation |
Liang, B. (Bangli), Chen, D. (Dianyong), Wang, B. (Bo), Kwasniewski, T, & Wang, Z. (Zhigong). (2010). Analysis, optimization, and design of 2-2.8 μm stacked multiple-junction PIN GaInAsSb/GaSb photodetectors for future O/E interconnections. IEEE Transactions on Electron Devices, 57(2), 361–367. doi:10.1109/TED.2009.2036303
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