Analysis, optimization, and design of 2-2.8 μm stacked multiple-junction PIN GaInAsSb/GaSb photodetectors for future O/E interconnections

Liang, B. (Bangli), Chen, D. (Dianyong), Wang, B. (Bo), T. Kwasniewski (Tad) and Wang, Z. (Zhigong)

2010-02-01

IEEE Transactions on Electron Devices , Volume 57 - Issue 2 p. 361- 367

Additional Metadata
Keywords	GaInAsSb/GaSb, Multiple junction, Optical-electrical (O/E) interconnections, Photodetectors, PIN, Vertically stacked
Persistent URL	dx.doi.org/10.1109/TED.2009.2036303
Journal	IEEE Transactions on Electron Devices
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Liang, B. (Bangli), Chen, D. (Dianyong), Wang, B. (Bo), Kwasniewski, T, & Wang, Z. (Zhigong). (2010). Analysis, optimization, and design of 2-2.8 μm stacked multiple-junction PIN GaInAsSb/GaSb photodetectors for future O/E interconnections. IEEE Transactions on Electron Devices, 57(2), 361–367. doi:10.1109/TED.2009.2036303

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