Analysis, optimization, and design of 2-2.8 μm stacked multiple-junction PIN GaInAsSb/GaSb photodetectors for future O/E interconnections

Liang, B. (Bangli), Chen, D. (Dianyong), Wang, B. (Bo), T. Kwasniewski (Tad) and Wang, Z. (Zhigong)

2010-02-01

IEEE Transactions on Electron Devices , Volume 57 - Issue 2 p. 361- 367

Additional Metadata
Keywords	GaInAsSb/GaSb, Multiple junction, Optical-electrical (O/E) interconnections, Photodetectors, PIN, Vertically stacked
Persistent URL	dx.doi.org/10.1109/TED.2009.2036303
Journal	IEEE Transactions on Electron Devices
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Liang, B. (Bangli), Chen, D. (Dianyong), Wang, B. (Bo), Kwasniewski, T, & Wang, Z. (Zhigong). (2010). Analysis, optimization, and design of 2-2.8 μm stacked multiple-junction PIN GaInAsSb/GaSb photodetectors for future O/E interconnections. IEEE Transactions on Electron Devices, 57(2), 361–367. doi:10.1109/TED.2009.2036303

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