2010-02-01
Analysis, optimization, and design of 2-2.8 μm stacked multiple-junction PIN GaInAsSb/GaSb photodetectors for future O/E interconnections
Publication
Publication
IEEE Transactions on Electron Devices , Volume 57 - Issue 2 p. 361- 367
Additional Metadata | |
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GaInAsSb/GaSb, Multiple junction, Optical-electrical (O/E) interconnections, Photodetectors, PIN, Vertically stacked | |
dx.doi.org/10.1109/TED.2009.2036303 | |
IEEE Transactions on Electron Devices | |
Organisation | Carleton University |
Liang, B. (Bangli), Chen, D. (Dianyong), Wang, B. (Bo), Kwasniewski, T, & Wang, Z. (Zhigong). (2010). Analysis, optimization, and design of 2-2.8 μm stacked multiple-junction PIN GaInAsSb/GaSb photodetectors for future O/E interconnections. IEEE Transactions on Electron Devices, 57(2), 361–367. doi:10.1109/TED.2009.2036303
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