2008-12-01
Active inductor symbolic analysis
Publication
Publication
Presented at the
20th International Conference on Microelectronics, ICM'08 (December 2008)
Enhanced analytical equations are derived to predict the inductance and series resistance of a common active inductor configuration. The equations, based on MOSFET small-signal parameters, are used to predict the inductance and series resistance of an active inductor implemented in a 0.18μmCMOS process. The inductor's characteristics are presented, demonstrating analytical equation accuracy and circuit functionality between 70 MHz and 700 MHz.
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dx.doi.org/10.1109/ICM.2008.5393558 | |
20th International Conference on Microelectronics, ICM'08 | |
Organisation | Department of Electronics |
MacEachern, L, Olszewski, D. (Dan), & Mahmoud, S.A. (2008). Active inductor symbolic analysis. Presented at the 20th International Conference on Microelectronics, ICM'08. doi:10.1109/ICM.2008.5393558
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