Enhanced analytical equations are derived to predict the inductance and series resistance of a common active inductor configuration. The equations, based on MOSFET small-signal parameters, are used to predict the inductance and series resistance of an active inductor implemented in a 0.18╬╝mCMOS process. The inductor's characteristics are presented, demonstrating analytical equation accuracy and circuit functionality between 70 MHz and 700 MHz.

Additional Metadata
Persistent URL dx.doi.org/10.1109/ICM.2008.5393558
Conference 20th International Conference on Microelectronics, ICM'08
Citation
MacEachern, L, Olszewski, D. (Dan), & Mahmoud, S. (Samy). (2008). Active inductor symbolic analysis. Presented at the 20th International Conference on Microelectronics, ICM'08. doi:10.1109/ICM.2008.5393558