A V-band low-noise, high gain, high linearity single-stage amplifier has been developed in a 90-nm CMOS technology. The design utilized modified co-planar waveguide transmission lines for the input/output matching networks, to avoid lines' width and spacing constraints and to sustain small chip area and low cost fabrication. The developed amplifier exhibited a low noise figure of 4.1 dB, and a gain higher than 10 dB in the frequency range of 57-58 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than 3 dBm. The proposed design is well suited for millimeter-wave (mmW) front-ends in ultra-wideband (UWB) radio-over-fiber (RoF) systems for high data-rate communications.

Additional Metadata
Keywords 60 GHz CMOS, ECCPW, LNA, RoF, V-band components
Persistent URL dx.doi.org/10.1109/RWS.2010.5434106
Conference 2010 IEEE Radio and Wireless Symposium, RWW 2010
Haroun, I. (Ibrahim), Wight, J. S, Plett, C, Fathy, A. (Aly), & Hsu, Y.-C. (Yaun-Chai). (2010). A V-band 90-nm CMOS low-noise amplifier with modified CPW transmission lines for UWB systems. In 2010 IEEE Radio and Wireless Symposium, RWW 2010 - Paper Digest (pp. 368–371). doi:10.1109/RWS.2010.5434106