The first solar cells using in-situ doped polysilicon contacts to form both emitter and back surface field (BSF) regions are reported. The use of polysilicon contacts permits extremely low thermal budget processing (maximum 850°C 5 sec for dopant activation), preserving substrate properties. The effectiveness of the BSF is best seen with backside illumination, where the photocurrent under natural sunlight is found to be over 30% of that obtained with frontside illumination, even though the substrate thickness is comparable to the minority carrier diffusion length. The applicability of the structure to bifacial operation is considered.

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Keywords back surface field, LPCVD, photovoltaic, polysilicon, polysilicon emitter, silicon, solar cell
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Conference Photonics North 2010
Du, J. (Jiang), Berndt, L.P. (Lyall P.), & Tarr, N.G. (2010). Silicon solar cells with polysilicon emitters and back surface fields. Presented at the Photonics North 2010. doi:10.1117/12.871608