A process for monolithically integrating MOS and AlGaN/GaN HFETs has been developed using a windowed epitaxy technique. AlGaN/GaN HFET devices display a forward current greater than 0.8 A/mm and a break-down voltage larger than 200 V. Field-plated devices have also been demonstrated. Enclosed MOS devices based on a 900 °C thermal oxide have been produced showing promising characteristics.

Additional Metadata
Keywords Epitaxy, Gallium nitride, HEMT, HFET, Integration, MBE, MOS
Persistent URL dx.doi.org/10.1002/pssc.201000914
Journal Physica Status Solidi (C) Current Topics in Solid State Physics
Citation
Chyurlia, P., Tang, H., Semond, F., Lester, T., Bardwell, J.A., Rolfe, S., & Tarr, N.G. (2011). GaN HEMT and MOS monolithic integration on silicon substrates. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(7-8), 2210–2212. doi:10.1002/pssc.201000914