A new homoleptic sublimable indium(iii) guanidinate, (In[(N iPr) 2CNMe 2] 3 (1), was synthesized from a facile high-yield procedure. Compound 1 crystallized is a P1 space group; a = 10.5989(14) Å, b = 11.0030(15) Å, c = 16.273(2) Å, α = 91.190(2)°, β = 96.561(2)°, γ = 115.555(2)°; R = 3.50%. Thermogravimetric analysis showed 1 to produce elemental indium as a residual mass. Thermolysis in a sealed NMR tube showed carbodiimide and protonated dimethyl amine by 1H NMR. Chemical vapour deposition experiments above 275 °C with air as the reactant gas showed 1 to readily deposit cubic indium oxide with good transparency.

Additional Metadata
Persistent URL dx.doi.org/10.1039/c1dt10877h
Journal Dalton Transactions
Citation
Barry, S.T, Gordon, P.G. (Peter G.), Ward, M.J. (Matthew J.), Heikkila, M.J. (Mikko J.), Monillas, W.H. (Wesley H.), Yap, G.P.A. (Glenn P. A.), … Leskelä, M. (Markku). (2011). Chemical vapour deposition of In 2O 3 thin films from a tris-guanidinate indium precursor. Dalton Transactions, 40(37), 9425–9430. doi:10.1039/c1dt10877h