2011-10-31
Efficient simulation for silicon-on-insulator waveguide electro-optic devices
Publication
Publication
Presented at the
11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 (September 2011)
This paper simulates the modulation efficiency and response time of free-carrier dispersion (FCD) effect on silicon-on-insulator (SOI) waveguide electro-optic (EO) devices using professional software called MEDICI. The dependence of free-carrier concentration on the applied voltage and device parameters and the corresponding response time are obtained, typically supporting a ∼10 19 cm -3 concentration variation and a 10-30ns response time at 1.5-2.0V voltage.
| Additional Metadata | |
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| Keywords | doping density, FCD, modulation efficiency of free carriers, response time of modulation process, SOI waveguide |
| Persistent URL | dx.doi.org/10.1109/NUSOD.2011.6041129 |
| Conference | 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 |
| Citation |
Sun, D. (DeGui), Hall, T.J. (Trevor J.), Vandusen, R, & Tarr, T.G. (T. Garry). (2011). Efficient simulation for silicon-on-insulator waveguide electro-optic devices. Presented at the 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011. doi:10.1109/NUSOD.2011.6041129
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