Efficient simulation for silicon-on-insulator waveguide electro-optic devices
This paper simulates the modulation efficiency and response time of free-carrier dispersion (FCD) effect on silicon-on-insulator (SOI) waveguide electro-optic (EO) devices using professional software called MEDICI. The dependence of free-carrier concentration on the applied voltage and device parameters and the corresponding response time are obtained, typically supporting a ∼10 19 cm -3 concentration variation and a 10-30ns response time at 1.5-2.0V voltage.
|Keywords||doping density, FCD, modulation efficiency of free carriers, response time of modulation process, SOI waveguide|
|Conference||11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011|
Sun, D. (DeGui), Hall, T.J. (Trevor J.), Vandusen, R, & Tarr, T.G. (T. Garry). (2011). Efficient simulation for silicon-on-insulator waveguide electro-optic devices. Presented at the 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011. doi:10.1109/NUSOD.2011.6041129