For the first time, we demonstrate an optically controlled passive RF switch realized in a common Si CMOS technology. Simulation results have been shown and a fabricated 230 μm x 240 μm chip has been measured. The newly developed switch is capable of working up to several GHz. Experimental results at 2 GHz show more than 20dB change in insertion loss between light and dark illumination states (varying from -30dB to -6.8dB). Application of a slight external DC bias reduces the ON state insertion loss to only 1.8 dB. Such bias could be easily produced in a future iteration by adding another photodiode to the circuit. This work opens a new frontier by combining commonly available IC technologies with optical control and high frequency devices.

Additional Metadata
Keywords optical control, RF switch, Si CMOS, Zero-biased
Persistent URL dx.doi.org/10.1109/MWP.2011.6088766
Conference 2011 IEEE International Topical Meeting on Microwave Photonics - Jointly Held with the 2011 Asia-Pacific Microwave Photonics Conference, MWP/APMP 2011
Citation
González, J.M. (José Manuel), Baillargeat, D. (Dominique), Delhote, N. (Nicolas), Roy, L, & McGarry, S. (2011). Zero-bias optically controlled RF switch in 0.13μm CMOS technology. In 2011 IEEE International Topical Meeting on Microwave Photonics - Jointly Held with the 2011 Asia-Pacific Microwave Photonics Conference, MWP/APMP 2011 (pp. 441–444). doi:10.1109/MWP.2011.6088766