2012-10-03
A new type of GaN HEMT based high power high-pass/low-pass phase shifter at X band
Publication
Publication
Presented at the
2012 IEEE MTT-S International Microwave Symposium, IMS 2012 (June 2012)
This paper presents a new type of robust GaN HEMT-based high power phase shifter operating at X-band. The proposed 0°/45° high-pass/low-pass phase shifter exhibits low insertion loss (2.5 dB), good return loss, and amplitude variation lower than 0.5 dB for the two phase states over the entire operational bandwidth ranging from 6 to 13 GHz. The relative phase performance is fairly constant over the bandwidth. The proposed phase shifter MMIC has been successfully demonstrated using a 0.8 μm gate GaN HEMT process.
| Additional Metadata | |
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| Keywords | GaN, High linearity, High power, Phase shifter, SPDT switch |
| Persistent URL | dx.doi.org/10.1109/MWSYM.2012.6259738 |
| Conference | 2012 IEEE MTT-S International Microwave Symposium, IMS 2012 |
| Citation |
Hettak, K., Ross, T., Gratton, D., & Wight, J. S. (2012). A new type of GaN HEMT based high power high-pass/low-pass phase shifter at X band. In IEEE MTT-S International Microwave Symposium Digest. doi:10.1109/MWSYM.2012.6259738
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