This paper presents a new type of robust GaN HEMT-based high power phase shifter operating at X-band. The proposed 0°/45° high-pass/low-pass phase shifter exhibits low insertion loss (2.5 dB), good return loss, and amplitude variation lower than 0.5 dB for the two phase states over the entire operational bandwidth ranging from 6 to 13 GHz. The relative phase performance is fairly constant over the bandwidth. The proposed phase shifter MMIC has been successfully demonstrated using a 0.8 μm gate GaN HEMT process.

Additional Metadata
Keywords GaN, High linearity, High power, Phase shifter, SPDT switch
Persistent URL dx.doi.org/10.1109/MWSYM.2012.6259738
Conference 2012 IEEE MTT-S International Microwave Symposium, IMS 2012
Citation
Hettak, K., Ross, T., Gratton, D., & Wight, J. S. (2012). A new type of GaN HEMT based high power high-pass/low-pass phase shifter at X band. In IEEE MTT-S International Microwave Symposium Digest. doi:10.1109/MWSYM.2012.6259738