High-power broadband GaN HEMT SPST/SPDT switches based on resonance inductors and shunt-stacked transistors
Novel X-band high-power monolithic SPST/SPDT switches in coplanar GaN technology are presented. The SPDT switch exhibits 1:6dB on-state insertion loss and better than 20dB isolation. Power handling measurements have shown that the 1dB compression point occurs with an input power equal to 38dBm at 10GHz. A combination of techniques were used to yield higher power handling while preserving low loss and high isolation. These circuit techniques include the use of stacked HEMTs to improve power handling and to minimize the loss and maintain high isolation, and also the use of a resonance inductor in parallel with the series HEMTs to improve the isolation of the switch. Simulated and experimental results are presented in support of the novel switches.
|Keywords||attenuators, GaN, high power, phase shfiters, SPDT switch, SPST switch, Tx/Rx module|
|Conference||7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012|
Hettak, K., Ross, T., Irfan, N., Gratton, D., Yagoub, M.C.E., & Wight, J. S. (2012). High-power broadband GaN HEMT SPST/SPDT switches based on resonance inductors and shunt-stacked transistors. In European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 (pp. 215–218).