Fabrication of a variable diffraction efficiency phase mask by multiple dose ion implantation

A variable diffraction efficiency phase mask is produced by focused ion beam, implanting a grating pattern into a fused SiO

2 substrate with a 100-nm-diam, 200keV Si beam. The substrate is prepared by cleaning and coating with a 20-nm-thick film of Al to dissipate the ion charge. The pattern consists of 930 lines, each 80μm long, at a pitch of 1.075μm, to obtain a 1-mm-long grating. The substrate is wet etched in a 1M% HF solution for about 45min to produce a phase mask with the desired diffraction efficiency. This phase mask is used to photoimprint Bragg gratings into standard hydrogenated single-mode telecommunication fibers using 193nm light from an ArF laser.