A method for the optimization of strain-induced Pockels effect in silicon waveguides is proposed. We introduce a new figure of merit and show a 35% enhancement in FOM compared to most efficient reported devices.

Additional Metadata
Keywords Electro-Optic Effect, Modulator, Pockels Effect, Silicon, Strain
Persistent URL dx.doi.org/10.1109/Group4.2013.6644453
Conference 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013
Citation
Aleali, A, Xu, D. (Danxia), Schmid, J.H. (Jens H.), Cheben, P. (Pavel), & Ye, W.N. (2013). Optimization of stress-induced pockels effect in silicon waveguides for optical modulators. Presented at the 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013. doi:10.1109/Group4.2013.6644453