This article presents the development of a large-signal transistor model for a power microwave pseudomorphic high-electron mobility transistor (pHEMT). This model won the first prize in the Microwave Transistor Modeling student competition held during the 2013 IEEE Microwave Theory and Techniques Society (MTT-S) International Microwave Symposium (IMS2013) in Seattle, Washington.

Additional Metadata
Persistent URL dx.doi.org/10.1109/MMM.2013.2288833
Journal IEEE Microwave Magazine
Citation
Ross, T.N. (Tyler N.), Cormier, G. (Gabriel), & Wight, J. S. (2014). Extraction of a model for a microwave Power pHEMT. IEEE Microwave Magazine, 15(1), 102–108. doi:10.1109/MMM.2013.2288833