A novel design of semiconductor-on-metal MSM photodetector for reducing dark current is reported. Leakage of 11.6μA and responsivity of 2mA/W is shown, while conventional metal-on-semiconductor design shows leakage of 166μA, and responsivity of 2.5mA/W.

Additional Metadata
Conference Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2010
Citation
Mirbaha, S., Tait, R, McGarry, S, & Tarr, N.G. (2010). A novel semiconductor-on-metal MSM photodetector design for dark current reduction. Presented at the Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2010.