This paper presents a high-power switched-filter GaN phase shifter, designed for X-band and offering good performance from 8-16 GHz. The manufactured 0°/22.5° switched-filter phase shifter has much wider bandwidth than is typically found with this configuration, while maintaining low insertion loss (< 2 dB), good return loss (> 11.15 dB) and an amplitude imbalance of less than 1.03 dB across X-band. The 1 dB compression point was higher than laboratory equipment was able to measure (> 38 dBm) and the phase shifter MMIC exhibited an IIP3 higher than 46 dBm. The proposed high-power phase shifter has been fabricated in a 0.5 μm GaN HEMT process and was designed using an accurate, customized switch FET model.

Additional Metadata
Keywords GaN, high linearity, high power, phase shifter, switch modeling
Persistent URL dx.doi.org/10.1109/MWSYM.2014.6848556
Conference 2014 IEEE MTT-S International Microwave Symposium, IMS 2014
Citation
Ross, T.N. (Tyler N.), Cormier, G. (Gabriel), Hettak, K. (Khelifa), & Wight, J. S. (2014). High-power X-band GaN switched-filter phase shifter. In IEEE MTT-S International Microwave Symposium Digest. doi:10.1109/MWSYM.2014.6848556