A non-switching mode Class J power amplifier (PA) is presented. Its output power capability is improved by driving the active device into the non-linear region to generate extra harmonics. The output matching circuit is also structured to filter out unwanted harmonics to let the PA retain high efficiency and high linearity concurrently. A GaN Hetero-junction Field Effect transistor has a low output capacitance. Therefore, combining with a reactive load, a relatively broadband resonance circuit at GHz frequencies is designed. A fully integrated Class J PA., which has an area of 1.8 × 1.3 mm., is realized with measured 12% overall efficiency at the 2 dB compression point (P2dB), 3 GHz bandwidth, and 20.3 dBm output referred 1 dB compression.

Additional Metadata
Keywords Broadband, Class J, Gallium Nitride (GaN), Power Amplifier
Persistent URL dx.doi.org/10.1109/WAMICON.2014.6857749
Conference 2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014
Citation
Wu, T. (Tongning), Plett, C, Rogers, J, & Li, M. (Ming). (2014). A fully integrated 1-4 GHz GaN Class J power amplifier. Presented at the 2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014. doi:10.1109/WAMICON.2014.6857749