Measurement of the vertical and lateral diffusion of interstitials in Si
The enhanced diffusion of boron and XTEM measurements were used to qualitatively measure the lateral and vertical diffusion of implantation induced interstitials in silicon. It is also found that platinum silicide contacts can be used to reduce the effects of implant induced damage while maintaining low contact resistance.
|Conference||24th European Solid State Device Research Conference, ESSDERC 1994|
Peters, C.J., Xu, D.-X., McCaffrey, J., Rolfe, S.J., Noel, J.-P., & Tarr, N.G. (1994). Measurement of the vertical and lateral diffusion of interstitials in Si. Presented at the 24th European Solid State Device Research Conference, ESSDERC 1994.