The high volatility of 1 has made it a very attractive precursor for the ALD of ZrO2 thin-films to-date. Deposition of thin-films can be achieved at relatively low temperatures with good conformality. However, the long-term thermal stability of bulk quantities of 1 is known to be poor as the material suffers from significant decomposition after prolonged heating. Moreover, treating bulk quantities of 1 to elevated temperatures (180C) for short periods of time also results in significant decomposition. While the thermal stability of 3 and 4 are notably inferior to that of 1, compound 2 represents a viable alternative to 1 for ALD processes. The low evaporation rate of 2 could conceivably produce thin-films of ZrO2 with better conformality at high aspect ratios and better control of atomic thickness. In addition, the higher thermal stability of 2 compared to 1 and high onset of volatilization may render it to be a good candidate for the production of the desired tetragonal phase of ZrO2. Further investigations toward the application of 2 in ALD processes are currently underway.

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Persistent URL dx.doi.org/10.1116/1.4901454
Journal Journal of Vacuum Science and Technology A
Citation
Huynh, K. (Keith), Laneman, S.A. (Scott A.), Laxman, R. (Ravi), Gordon, P.G. (Peter G.), & Barry, S.T. (2015). New Zr-containing precursors for the atomic layer deposition of ZrO2. Journal of Vacuum Science and Technology A, 33(1). doi:10.1116/1.4901454