Self-seeding gallium oxide nanowire growth by pulsed chemical vapor deposition
A new heteroleptic gallium (III) alkyl amidinate [monoacetamidinatodiethylgallium(III), compound 1] was found to undergo self-seeding pulsed chemical vapor deposition (p-CVD) to gallium metal above temperatures of 450 °C. Below this temperature, the mono-layer formed on the surface of silica and alumina is unreactive to itself and H<inf>2</inf>O and O<inf>2</inf> co-reactants. With no co-reactant above 450 °C gallium metal spheres (150-500 nm) was formed in a p-CVD experiment. With the addition of short H<inf>2</inf>O pulses produced interesting morphologies and gallium metal/gallium oxide structures resembling "ice cream cones" of varying sizes (<150-500 nm). The addition of O<inf>2</inf> produced micron long nanowires <250 nm in width and a mat of nanoparticles on both silicon and alumina. Scanning electron micrograph of pulsed chemical vapor deposition of 1 with H<inf>2</inf>O as a co-reactant at 500 °C.
|Keywords||chemical vapor deposition, Ga<inf>2</inf>O<inf>3</inf>, gallium amidinate, growth, nanowires|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
Pallister, P.J. (Peter J.), Buttera, S.C. (Sydney C.), & Barry, S.T. (2015). Self-seeding gallium oxide nanowire growth by pulsed chemical vapor deposition. Physica Status Solidi (A) Applications and Materials Science, 212(7), 1514–1518. doi:10.1002/pssa.201532275