1985
A True Polysilicon Emitter Transistor
Publication
Publication
IEEE Electron Device Letters , Volume 6 - Issue 6 p. 288- 290
A polysilicon emitter transistor has been fabricated in which the metallurgical base/emitter junction coincides with the interface between polycrystalline and monocrystalline material. The emitter region was formed by deposition of heavily phosphorus-doped polysilicon in an LPCVD reactor at 627°C, a temperature low enough to prevent diffusion of phosphorus into the substrate. Emitter Gummel numbers of over 1014 scm-4 have been obtained with this structure, allowing common emitter current gains in excess of 10 000 to be reached for base implant doses of 1012 cm-2.
| Additional Metadata | |
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| doi.org/10.1109/EDL.1985.26128 | |
| IEEE Electron Device Letters | |
| Organisation | Department of Electronics |
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Rowlandson, M.B., & Tarr, N.G. (1985). A True Polysilicon Emitter Transistor. IEEE Electron Device Letters, 6(6), 288–290. doi:10.1109/EDL.1985.26128
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