1985
A Polysilicon Emitter Solar Cell
Publication
Publication
IEEE Electron Device Letters , Volume 6 - Issue 12 p. 655- 658
A new solar cell structure is reported in which the emitter consists of a thin layer of in situ phosphorus-doped polysilicon deposited by a low-pressure chemical vapor deposition (LPCVD) tehniques. The highest process temperature required to fabricate this structure is only 627 °C. Although the use of a polysilicon emitter results in some degradation in blue response, both theoretical and experimental results are presented indicating that photocurrent densities in excess of 30 mA cm 2 are attainable under AM1 illumination. The low back-injection current associated with the polysilicon emitter has allowed a very high open circuit voltage of 652 mV to be obtained at 28° C in a cell illuminated to give a short circuit current density of 30 mA cm-2.
| Additional Metadata | |
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| doi.org/10.1109/EDL.1985.26264 | |
| IEEE Electron Device Letters | |
| Organisation | Department of Electronics |
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Tarr, N.G. (1985). A Polysilicon Emitter Solar Cell. IEEE Electron Device Letters, 6(12), 655–658. doi:10.1109/EDL.1985.26264
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