A Polysilicon Emitter Solar Cell
IEEE Electron Device Letters , Volume 6 - Issue 12 p. 655- 658
A new solar cell structure is reported in which the emitter consists of a thin layer of in situ phosphorus-doped polysilicon deposited by a low-pressure chemical vapor deposition (LPCVD) tehniques. The highest process temperature required to fabricate this structure is only 627 °C. Although the use of a polysilicon emitter results in some degradation in blue response, both theoretical and experimental results are presented indicating that photocurrent densities in excess of 30 mA cm 2 are attainable under AM1 illumination. The low back-injection current associated with the polysilicon emitter has allowed a very high open circuit voltage of 652 mV to be obtained at 28° C in a cell illuminated to give a short circuit current density of 30 mA cm-2.